Semiconductor device having gaps within the conductive parts

ABSTRACT

A semiconductor device according to an embodiment includes a low-adhesion film, a pair of substrates, and a metal electrode. The low-adhesion film has lower adhesion to metal than a semiconductor oxide film. The pair of substrates is provided with the low-adhesion film interposed therebetween. The metal electrode passes through the low-adhesion film and connects the pair of substrates, and includes, between the pair of substrates, a part thinner than parts embedded in the pair of substrates. A portion of the metal electrode embedded in one substrate is provided with a gap interposed between the portion and the low-adhesion film on the other substrate.

CROSS-REFERENCE TO RELATED APPLICATIONS

The present continuation application is a continuation of applicationSer. No. 14/928,144, filed on Oct. 30, 2015, currently pending, whichclaims the benefit of priority under 35 U.S.C. § 119 from JapanesePatent Application No. 2014-224602, filed on Nov. 4, 2014. The entirecontents of both applications are incorporated herein by reference.

FIELD

Embodiments described herein relate generally to a semiconductor deviceand a method for manufacturing a semiconductor device

BACKGROUND

There have been semiconductor devices with semiconductor chips stackedin multiple stages, thus allowing a reduction in footprint. Suchsemiconductor devices are manufactured by bonding, in multiple stages,substrates in which semiconductor elements or integrated circuits areformed, and dicing them into semiconductor chips, for example.

A semiconductor oxide film is generally provided on a surface of eachsubstrate to be bonded, and a plurality of electrodes to be connected bybonding substrates is provided in corresponding positions in a surfaceof each semiconductor oxide film. Here, in a step of bonding substratesto each other, misalignment in position of electrodes to be connectedmay be produced.

In such a case, metal of an electrode provided in one substrate directlycontacts a semiconductor oxide film provided on a surface of anothersubstrate, and is diffused into the other substrate in a heat treatmentstep performed later, adversely affecting the characteristics of asemiconductor element or an integrated circuit provided in the othersubstrate.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is an explanatory diagram illustrating a schematic section of asemiconductor device according to an embodiment;

FIGS. 2A to 4C are explanatory diagrams illustrating a process ofmanufacturing the semiconductor device according to the embodiment;

FIGS. 5A and 5B are explanatory diagrams illustrating a schematicsection of a semiconductor device according to a first modification ofthe embodiment; and

FIGS. 6A and 6B are explanatory diagrams illustrating a schematicsection of a semiconductor device according to a second modification ofthe embodiment.

DETAILED DESCRIPTION

According to the embodiment, a semiconductor device is provided. Thesemiconductor device includes a low-adhesion film, a pair of substrates,and a metal electrode. The low-adhesion film has lower adhesion to metalthan a semiconductor oxide film. The pair of substrates is provided withthe low-adhesion film interposed therebetween. The metal electrodepasses through the low-adhesion film and connects the pair ofsubstrates, and includes, between the pair of substrates, a part thinnerthan parts embedded in the pair of substrates. A portion of the metalelectrode embedded in one of the substrates is provided with a gapinterposed between the portion and the low-adhesion film on the othersubstrate.

Hereinafter with reference to the accompanying drawings, a semiconductordevice and a method for manufacturing the semiconductor device accordingto an embodiment will be described in detail. This embodiment is notintended to limit the present invention. Hereinafter, so-called Wafer onWafer in which a first substrate in which a logic circuit is formed anda second substrate in which an image sensor is formed are bondedtogether will be described as an example, but the method formanufacturing the semiconductor device according to this embodiment canalso be used for Chip on Wafer or Chip on Chip. Circuits formed in thefirst substrate and the second substrate are not limited to the logiccircuit and the image sensor, and may be any semiconductor integratedcircuits.

FIG. 1 is an explanatory diagram illustrating a schematic section of asemiconductor device 1 according to an embodiment. As illustrated inFIG. 1, the semiconductor device 1 includes a low-adhesion film 2, afirst substrate 31 and a second substrate 32, and a metal electrode 4(hereinafter, simply written as an “electrode 4”).

The low-adhesion film 2 is a film formed by a material that has loweradhesion to metal than a semiconductor oxide film (e.g. a silicon oxidefilm to which no impurities are added). Here the material that has loweradhesion to metal than a semiconductor oxide film is formed, forexample, by a silicon nitride, a silicon nitride to which carbon isadded, an insulating film such as a silicon oxide to which carbon isadded, a low-k material, or the like.

The low-adhesion film 2 is formed by bonding together a firstlow-adhesion film 21 provided on a surface of the first substrate 31before bonding and a second low-adhesion film 22 provided on a surfaceof the second substrate 32 before bonding.

The first substrate 31 and the second substrate 32 are semiconductorsubstrates such as silicon wafers, for example. A logic circuit (notillustrated) is built in the first substrate 31. An image sensor (notillustrated) is built in the second substrate 32. The first substrate 31and the second substrate 32 are provided with the low-adhesion filminterposed therebetween.

The electrode 4 is formed by copper, for example, and passes through thelow-adhesion film 2 and connects the logic circuit built in the firstsubstrate 31 and the image sensor built in the second substrate 32.Material of the electrode 4 may be a metal other than copper.

The electrode 4 includes a part embedded in the first substrate 31(hereinafter, written as a “first part 41”) and a part embedded in thesecond substrate 32 (hereinafter, written as a “second part 42”).Further, the electrode 4 includes a part connecting the first part 41and the second part 42 (hereinafter, written as a “third part 43”). Thewidth d3 of the third part 43 is narrower than the width d1 of the firstpart 41 and the width d2 of the second part 42.

The semiconductor device 1 also includes barrier metal 23 formed bytantalum or a tantalum nitride between the first part 41 of theelectrode 4 and the first substrate 31 and the first low-adhesion film21. The semiconductor device 1 also includes barrier metal 24 formed bytantalum or a tantalum nitride, for example, between the second part 42of the electrode 4 and the second substrate 32 and the secondlow-adhesion film 22.

The first part 41, a portion of the electrode 4 embedded in the firstsubstrate 31, one substrate, is provided with a gap 51 interposedbetween the first part 41 and the second low-adhesion film 22 on thesecond substrate 32, the other substrate. The second part 42, a portionof the electrode 4 embedded in the second substrate 32, the othersubstrate, is provided with a gap 52 interposed between the second part42 and the first low-adhesion film 21 on the first substrate 31, the onesubstrate.

Therefore, in the semiconductor device 1, a part of a peripheral surfaceof the first part 41 facing the second substrate 32 does not contact thesecond low-adhesion film 22. Thus the metal of the first part 41 can beprevented from being diffused into the second substrate 32 via thesecond low-adhesion film 22.

Likewise, in the semiconductor device 1, a part of a peripheral surfaceof the second part 42 facing the first substrate 31 does not contact thefirst low-adhesion film 21. Thus the metal of the second part 42 can beprevented from being diffused into the first substrate 31 via the firstlow-adhesion film 21.

The semiconductor device 1 can prevent diffusion of the metal from thefirst part 41 of the electrode 4 into the first substrate 31 by thebarrier metal 23, and can prevent diffusion of the metal from the secondpart 42 of the electrode 4 into the second substrate 32 by the barriermetal 24.

Next, with reference to FIGS. 2A to 4C, a method for manufacturing thesemiconductor device 1 will be described. FIGS. 2A to 4C are explanatorydiagrams illustrating a process of manufacturing the semiconductordevice 1 according to the embodiment. When the semiconductor device 1 ismanufactured, first, as illustrated in FIG. 2A, the first substrate 31in which the logic circuit (not illustrated) is built is prepared.

Then, as illustrated in FIG. 2B, on a surface of the first substrate 31,the first low-adhesion film 21 is formed, for example, by a siliconnitride, a silicon nitride to which carbon is added, an insulating filmsuch as a silicon oxide to which carbon is added, a low-k material, orthe like.

With this, the first low-adhesion film 21 with low adhesive to copper,the material of the electrode 4 to be formed later, can be formed. Thefirst low-adhesion film 21 is formed by chemical vapor deposition (CVD),for example. When the first low-adhesion film 21 is formed by an organiclow-k material, the first low-adhesion film 21 may be formed by a spincoater.

Here, the first low-adhesion film 21 is formed on the surface of thefirst substrate 31. Alternatively, the first low-adhesion film 21 may beformed on a surface of a silicon oxide film after the silicon oxide filmis formed on the surface of the first substrate 31 as an interlayerdielectric.

Subsequently, as illustrated in FIG. 2C, after a resist 6 is applied toa surface of the first low-adhesion film 21, the resist 6 on a positionin which to form the electrode 4 is removed by photolithography to forman opening 61.

Then, as illustrated in FIG. 2D, using the resist 6 as a mask,anisotropic etching such as reactive ion etching (RIE), for example, isperformed on the first low-adhesion film 21 and the first substrate 31,thereby forming an opening 62 in the first substrate 31. Here, etchingis performed until a bottom surface of the opening 62 is at a depth toreach wiring of the logic circuit. Thereafter, on an inner peripheralsurface of the opening 62, the barrier metal 23 is formed by tantalum ora tantalum nitride, for example.

Subsequently, as illustrated in FIG. 3A, after the resist 6 is removed,a copper layer 40 is placed on the opening 62 and the first low-adhesionfilm 21 by electrolytic plating or CVD, for example, to fill the opening62 with copper.

Then, the copper layer 40 is polished by chemical mechanical polishing(CMP), for example, to form the first part 41 of the electrode 4 asillustrated in FIG. 3B. Thereafter, polishing by CMP is continuedfurther to retreat a surface of the first part 41 in the electrode 4several nm (e.g. 3 to 9 nm) from a surface of the first low-adhesionfilm 21 as illustrated an FIG. 3C.

On the second substrate 32 to be bonded to the first substrate 31, by aprocess similar to the above-described process, the second low-adhesionfilm 22 is formed on the surface and the second part 42 of the electrode4 is formed. Then, a surface of the second part 42 of the electrode 4 isretreated several nm from a surface of the second low-adhesion film 22.The second part 42 of the electrode 4 formed in the second substrate 32is formed by the process similar to that of the first part 41, and thushas a thickness equal to that of the first part 41.

Thereafter, the surface of the first low-adhesion film 21 and thesurface of the second low-adhesion film 22 are plasma-treated toactivate the surface of the first low-adhesion film 21 and the surfaceof the second low-adhesion film 22 to form a dangling bond on thesurface of the first low-adhesion film 21 and the surface of the secondlow-adhesion film 22. Further, the surface of the first low-adhesionfilm 21 and the surface of the second low-adhesion film 22 are cleanedby pure water to cause hydroxyl groups to adhere to the dangling bond.

Then, as illustrated in FIG. 4A, the first substrate 31 and the secondsubstrate 32 are disposed to correspond to each other so that the firstlow-adhesion film 21 on the surface of the first substrate 31 and thesecond low-adhesion film 22 on the surface of the second substrate 32face each other. Thereafter, as illustrated in FIG. 4B, the surface ofthe first low-adhesion film 21 and the surface of the secondlow-adhesion film 22 are joined to bond the first substrate 31 and thesecond substrate 32 together.

At this time, when the precision of alignment between the firstsubstrate 31 and the second substrate 32 is inadequate, or when there isa difference in formation positions between the first part 41 and thesecond part 42 of the electrode 4, as illustrated in FIG. 4B,misalignment is produced between the position of the first part 41 andthe position of the second part 42.

In such a case, in this embodiment, since the first part 41 of theelectrode 4 is retreated several nm from the surface of the firstlow-adhesion film 21, the first part 41 does not contact the surface ofthe second low-adhesion film 22, and thus diffusion of the copper of thefirst part 41 into the second substrate 32 can be prevented.

Likewise, in this embodiment, since the second part 42 of the electrode4 is retreated several nm from the surface of the second low-adhesionfilm 22, the second part 42 does not contact the surface of the firstlow-adhesion film 21, and thus diffusion of the copper of the secondpart 42 into the first substrate 31 can be prevented.

In this stage, the first part 41 and the second part 42 of the electrode4 are not connected, and joining forces between the first low-adhesionfilm 21 and the second low-adhesion film 22 are insufficient.Specifically, when only joined, the first low-adhesion film 21 and thesecond low-adhesion film 22 are in a state of being joined byintermolecular forces of hydrogen bonds between hydroxyl groups in thebonded surfaces, relatively weak joining forces.

Therefore, heat treatment is performed to connect the first part 41 andthe second part 42 of the electrode 4 and increase the joining forcesbetween the first low-adhesion film 21 and the second low-adhesion film22. With this, as illustrated in FIG. 4C, the first part 41 and thesecond part 42 of the electrode 4 are thermally expanded and connected.At the same time, water molecules are evaporated from a joint surfacebetween the first low-adhesion film 21 and the second low-adhesion film22, and the first low-adhesion film 21 and the second low-adhesion film22 are joined by strong joining forces due to covalent bonds.

The thermal expansion at this time may cause temporary contact betweenthe first part 41 and the second low-adhesion film 22 and contactbetween the second part 42 and the first low-adhesion film 21. However,after that, when the heat treatment is completed and the electrode 4returns to room temperature, the electrode 4 thermally contracts.

Here, as described above, the first low-adhesion film 21 and the secondlow-adhesion film 22 are formed by a silicon nitride, a silicon nitrideto which carbon is added, an insulating film such as a silicon oxide towhich carbon is added, a low-k material, or the like.

Therefore, when the electrode 4 thermally contracts, a gap 51 is formedbetween a part of a peripheral surface of the first part 41 facing thesecond substrate 32 and the second low-adhesion film 22, and a gap 52 isformed between a part of a peripheral surface of the second part 42facing the first substrate 31 and the first low-adhesion film 21.Further, a third part 43 is formed by a connecting portion between thefirst part 41 and the second part 42 narrowing by thermal contraction,completing the semiconductor device illustrated in FIG. 1.

Here, as described above, before the first substrate 31 and the secondsubstrate 32 are bonded together, the thickness of the first part 41 andthe thickness of the second part 42 are equal. Thus, the gaps 51 and 52of the same size are formed on the opposite sides of the third part 43in the electrode 4 (see FIG. 1).

With this, the first part 41, a portion of the electrode 4 embedded inthe first substrate 31, one substrate, is provided with the gap 51 ofsubstantially the same size as the gap 52 between the second part 42, aportion of the electrode 4 embedded in the second substrate 32, theother substrate, and the first low-adhesion film 21 on the firstsubstrate 31, the one substrate, interposed between the first part 41and the second low-adhesion film 22 on the second substrate 32, theother substrate. Therefore, joint strength across the joint surfacebetween the first low-adhesion film 21 and the second low-adhesion film22 can be made uniform.

When the first part 41 contacts the second low-adhesion film 22 and thesecond part 42 contacts the first low-adhesion film 21 temporarilyduring the heat treatment, by retreating the surfaces of the first part41 and the second part 42 of the electrode 4 several nm further,occurrence of such temporary contacts can be prevented.

As described above, a semiconductor device according to the embodimentincludes a pair of substrates provided with a low-adhesion film that haslower adhesion to metal than a semiconductor oxide film interposedtherebetween, and a metal electrode passing through the low-adhesionfilm and connecting the pair of substrates. The metal electrodeincludes, between the pair of substrates, a part thinner than partsembedded in the pair of substrates.

Further, a portion of the metal electrode embedded in one substrateaccording to the embodiment is provided with a gap interposed betweenthe portion and the low-adhesion film on the other substrate. The gapallows the semiconductor device to prevent diffusion of metal of themetal electrode provided in the surface of one substrate into the othersubstrate.

The above-described embodiment has provided an example in which alow-adhesion film is provided on both a first substrate and a secondsubstrate, both a first part and a second part in an electrode areretreated from surfaces of the low-adhesion films, and the firstsubstrate and the second substrate are bonded together, which is anexample.

Specifically, a low-adhesion film may be provided on one of the firstsubstrate and the second substrate. Further, one of the first part andthe second part in the electrode may be retreated from a surface of alow-adhesion film to bond the first substrate and the second substratetogether. Hereinafter, modifications with such configurations will bedescribed with reference to FIGS. 5A to 6B.

FIGS. 5A and 5B are explanatory diagrams illustrating a schematicsection of a semiconductor device 1 a according to a first modificationof the embodiment. FIGS. 6A and 6B are explanatory diagrams illustratinga schematic section of a semiconductor device 1 b according to a secondmodification of the embodiment. Of components illustrated in FIGS. 5A to6B, components identical to the components illustrated in FIG. 1 aredenoted by reference numerals identical to the reference numeralsillustrated in FIG. 1, and will not be described.

In the first modification, as illustrated in FIG. 5A, a first substrate31 on which a first low-adhesion film 21 is formed and a surface of afirst part 41 a of an electrode is made flush with a surface of thefirst low-adhesion film 21, and a second substrate 32 on which a secondlow-adhesion film 22 is formed and a surface of a second part 42 of theelectrode is retreated from a surface of the second low-adhesion film22, are used.

When the first substrate 31 and the second substrate 32 are bondedtogether and heat-treated, as illustrated in FIG. 5B, the first part 41a and the second part 42 are thermally expanded and connected to be anelectrode 4 a. Thereafter, when the heat treatment is completed and theelectrode 4 a returns to room temperature, in the semiconductor device 1a, a gap 53 is formed between a part of a peripheral surface of thesecond part 42 in the electrode 4 a facing the first substrate 31 andthe first low-adhesion film 21.

With this, in the semiconductor device 1 a, the part of the peripheralsurface of the second part 42 facing the first substrate 31 does notcontact the first low-adhesion film 21, and thus metal of the secondpart 42 can be prevented from being diffused into the first substrate 31via the first low-adhesion film 21.

Therefore, when there is an element that is degraded in characteristicsby diffusion of metal in the vicinity of the first part 41 a, and thereis no element that is degraded in characteristics by diffusion of metalin the vicinity of the second part 42, the semiconductor device 1 a canprevent characteristic degradation of the element in the vicinity of thefirst part 41 a.

Further, since there is no gap between a part of a peripheral surface ofthe first part 41 a facing the second substrate 32 and the secondlow-adhesion film 22, the semiconductor device 1 a can increase jointstrength between the first low-adhesion film 21 and the secondlow-adhesion film 22.

In a second modification, as illustrated in FIG. 6A, a first substrate31 on which a first low-adhesion film 21 is formed and a surface of afirst part 41 a of an electrode is made flush with a surface of thefirst low-adhesion film 21, and a second substrate 33 on which a secondlow-adhesion film 22 is not formed and a surface of a second part 42 ofthe electrode is retreated from a joint surface, are used.

When the first substrate 31 and the second substrate 33 are bondedtogether and heat-treated, as illustrated in FIG. 6B, the first part 41a and the second part 42 are thermally expanded and connected to be anelectrode 4 b. Thereafter, when the heat treatment is completed and theelectrode 4 b returns to room temperature, in the semiconductor device 1b, a gap 54 is formed between a part of a peripheral surface of thesecond part 42 in the electrode 4 b facing the first substrate 31 andthe first low-adhesion film 21.

With this, in the semiconductor device 1 b, the part of the peripheralsurface of the second part 42 facing the first substrate 31 does notcontact the first low-adhesion film 21, and thus metal of the secondpart 42 can be prevented from being diffused into the first substrate 31via the first low-adhesion film 21.

Therefore, when there is an element that is degraded in characteristicsby diffusion of metal in the vicinity of the first part 41 a, and thereis no element that is degraded in characteristics by diffusion of metalin the vicinity of the second part 42, the semiconductor device 1 b canprevent characteristic degradation of the element in the vicinity of thefirst part 41 a.

Further, since there is no gap between a part of a peripheral surface ofthe first part 41 a facing the second substrate 33 and the secondsubstrate 33, the semiconductor device 1 b can increase joint strengthbetween the first low-adhesion film 21 and the second substrate 33.Further, when the semiconductor device 1 b is manufactured, a step offorming a second low-adhesion film 22 on a surface of the secondsubstrate 33 can be omitted, and thus the manufacturing process can besimplified.

The above-described embodiment has provided an example in which a pairof substrates is bonded together with a low-adhesion film interposedtherebetween. The embodiment is also applicable to a semiconductordevice manufactured by bonding three or more substrates together and amethod for manufacturing the semiconductor device.

While certain embodiments have been described, these embodiments havebeen presented by way of example only, and are not intended to limit thescope of the inventions. Indeed, the novel embodiments described hereinmay be embodied in a variety of other forms; furthermore, variousomissions, substitutions and changes in the form of the embodimentsdescribed herein may be made without departing from the spirit of theinventions. The accompanying claims and their equivalents are intendedto cover such forms or modifications as would fall within the scope andspirit of the inventions.

What is claimed is:
 1. A semiconductor device comprising: a firstsubstrate that includes a first conductive part and a first low-adhesionfilm; a second substrate that includes a second conductive part and asecond low-adhesion film, the first and second low-adhesion films beingin contact with each other and between the first and second substrates,the first and second conductive parts being in contact with each otherand between the first and second substrates, and a length of a contactportion between the first and second conductive parts in a directionparallel to a main surface of the first or second substrate beingshorter than a maximum length of the first conductive part in thedirection and being shorter than a maximum length of the secondconductive part in the direction; and a first gap that is formed betweenthe first conductive part and the second low-adhesion film; and a secondgap that is formed between the second conductive part and the firstlow-adhesion film.
 2. The semiconductor device according to claim 1,wherein each of the first and second low-adhesion films has loweradhesion to metal than a semiconductor oxide film.
 3. The semiconductordevice according to claim 1, wherein the lengths of the first and secondconductive parts in the direction are equal to each other.
 4. Thesemiconductor device according to claim 1, wherein each of the first andsecond low-adhesion film is a film formed by a semiconductor nitridefilm, a semiconductor oxide film containing carbon, or a low-k material.5. The semiconductor device according to claim 1, wherein each of thefirst and second low-adhesion film is a film that has lower adhesion tometal than a silicon oxide to which no impurities are added.
 6. Thesemiconductor device according to claim 1, wherein the first and secondgaps are formed at both the ends of the contact portion in thedirection.
 7. The semiconductor device according to claim 1, furthercomprising barrier metals provided between the first conductive part andthe first low-adhesion film and between the second conductive part andthe second low-adhesion film, respectively.
 8. The semiconductor deviceaccording to claim 1, wherein the first or the second low-adhesion filmhas lower adhesion to metal than a semiconductor oxide film.
 9. Thesemiconductor device according to claim 1, wherein the first substrateincludes a logic circuit, and the second substrate includes an imagesensor.
 10. A semiconductor device comprising: a first member thatincludes a first conductive part and a first low adhesion film; a secondmember that includes a second conductive part and a second low-adhesionfilm, the first and second low-adhesion films being in contact with eachother and between the first and second members, the first and secondconductive parts being in contact with each other and between the firstand second members, and a length of a contact portion between the firstand second conductive parts in a direction parallel to a contact surfacebetween the first and second members being shorter than a maximum lengthof the first conductive part in the direction and being shorter than amaximum length of the second conductive part in the direction; and afirst gap that is formed between the first conductive part and thesecond low adhesion film; and a second gap that is formed between thesecond conductive part and the first low-adhesion film.
 11. Thesemiconductor device according to claim 10, wherein each of the firstand second low-adhesion film has lower adhesion to metal than asemiconductor oxide film.
 12. The semiconductor device according toclaim 10, wherein each of the first and second members includes asubstrate.
 13. The semiconductor device according to claim 10, whereinthe lengths of the first and second conductive parts in the directionare equal to each other.
 14. The semiconductor device according to claim10, wherein each of the first and second low-adhesion film is a filmformed by a semiconductor nitride film, a semiconductor oxide filmcontaining carbon, or a low-k material.
 15. The semiconductor deviceaccording to claim 10, wherein each of the first and second low-adhesionfilm is a film that has lower adhesion to metal than a silicon oxide towhich no impurities are added.
 16. The semiconductor device according toclaim 10, wherein the first and second gaps formed at both the ends ofthe contact portion in the direction.
 17. The semiconductor deviceaccording to claim 10, further comprising barrier metals providedbetween the first conductive part and the first low-adhesion film andbetween the second conductive part and the second low-adhesion film,respectively.
 18. The semiconductor device according to claim 10,wherein the first or the second low-adhesion film has lower adhesion tometal than a semiconductor oxide film.
 19. The semiconductor deviceaccording to claim 10, wherein the first member includes a substrate inwhich a logic circuit is provided, and the second member includes asubstrate in which an image sensor is provided.
 20. A semiconductordevice comprising: a first substrate that includes a first conductivepart and a first insulating material; a second substrate that includes asecond conductive part and a second insulating material, the first andsecond insulating materials being in contact with each other and betweenthe first and second substrates, the first and second conductive partsbeing in contact with each other and between the first and secondsubstrates, and a length of a contact portion between the first andsecond conductive parts in a direction parallel to a main surface of thefirst or second substrate being shorter than a maximum length of thefirst conductive part in the direction and being shorter than a maximumlength of the second conductive part in the direction; and a first gapthat is formed between the first conductive part and the secondinsulating material; and a second gap that is formed between the secondconductive part and the first insulating material.
 21. The semiconductordevice according to claim 20, wherein the first and second insulatingmaterials are insulating films.
 22. The semiconductor device accordingto claim 20, wherein the first and second insulating materials arelow-adhesion materials.
 23. The semiconductor device according to claim22, wherein the low-adhesion materials are low-adhesion films.